STN4NF06L

STN4NF06L Datasheet Automotive-grade N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package 4 3 2 1 SOT-223 D(2, 4) Features Order code VDS RDS(on) max. ID STN4NF06L 60 V < 0.1 Ω 4A AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested Low gate charge Applications Switching applications G(1) Description This Power MOSFET has been developed using STMicroelectronics' unique S(3) STripFET process, which is specifically designed to minimize input capacitance and Int_schem_nTnZ_SOT_223 gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STN4NF06L Product summary Order code STN4NF06L Marking 4NF06L Package SOT-223 Packing Tape and reel DS5801 - Rev 3 - May 2020 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0 V) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Derating Factor dv/dt(3) Peak diode recovery avalanche energy EAS(4) Single pulse avalanche energy Tstg Storage temperature range TJ Operating junction tem...