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FDA16N50-F109

N-Channel UniFET MOSFET

Description

FDA16N50_F109 — N-Channel UniFETTM MOSFET November 2013 FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features RDS(on) = 380 m (Max.) @ VGS = 10, ID = 8.3 A Low Gate Charge (Typ. 32 nC) Low C rss (Typ. 20 pF) 100% Avalanche Tested Description UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar...

Fairchild Semiconductor

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