SSF2N60

                                 SSF2N60  Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A TO220    Marking and pin Assignm ent  Schematic dia gram  Features and Benefits: „ Advanced Process Technology „ Special designed for PWM, load switching dan gene ral pur pose applications „ Ultra low on-r esistance with low gate charg e „ Fastswitching and re verse b ody reco very „ 150 ℃ operati ng temperatur e       Description: These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology. T his advance d technology has be en especially tailored t o minimize on-state resistance, provide superior switching performance, and withstand high ene rgy pulse in the avala nche and commutation mode. T hese devices are well suited for high ef ficiency switch mode power supplies Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS Drain-S VGS EAS IAS TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ 54 Linear Derating Factor ource Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=55mH Avalanche Current @ L=55mH Operating Junction and Storage Temperature Range 0.43 600 ± 30 110 2 -55 to + 150 2 1.3 8 W W/°C V V mJ A °C A Units ©Silikron Semiconductor CO.,LTD. 2011.08.18 www.silikron.com  Version : 1.0 pa ge 1 of 8 http://www.Datasheet4U.com                                ...