P3NK90Z

STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP Datasheet N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and TO-220FP packages TAB 23 1 DPAK TAB TO-220 1 23 3 2 1 TO-220FP D(2, TAB) G(1) S(3) AM01475V1 Product status link STD3NK90ZT4 STP3NK90Z STP3NK90ZFP Features Order code VDS RDS(on) max. ID STD3NK90ZT4 STP3NK90Z 900 V 4.8 Ω 3A STP3NK90ZFP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected Package DPAK TO-220 TO-220FP Applications Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS2980 - Rev 3 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value DPAK, TO-220 TO-220FP VDS Drain-source voltage 900 VGS Gate-source voltage ± 30 ID Drain current (continuous) at TC = 25 °C 3 3 (1) ID Drain current (continuous) at TC = 100 °C 1.89 1.89 (1) IDM (2) Drain current (pulsed) 12 12 (1) PTOT Total dissipation at TC = 25 °C 90 ...