SVD4N60D

SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD4N60T SVD4N60F SVD4N60FG SVD4N60D SVD4N60DTR Package TO-220-3L TO-220F-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD4N60T SVD4N60F SVD4N60FG SVD4N60D SVD4N60D Material Pb free Pb free Halogen free Pb free Pb free Packing Tube Tube Tube Tube Tape & Reel HANGZHOU SILAN MI CROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.3 2010.12.13 Page 1 of 9 http://www.Datasheet4U.com SVD4N60D/F(G)/T_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg 100 0.8...