Si7860DP

Si7860DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.008 at VGS = 10 V 0.011 at VGS = 4.5 V ID (A) 18 15 FEATURES TrenchFET® Power MOSFET PWM Optimized for High Efficiency Available RoHS* New Low Thermal Resistance COMPLIANT PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONS Buck Converter - High Side or Low Side Synchronous Rectifier - Secondary Rectifier D PowerPAK SO-8 6.15 mm S 1 2 3 S S 5.15 mm G 4 D 8 7 6 5 D D D G Bottom View S Ordering Information: Si7860DP-T1 Si7860DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Continuous)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS L 0.1 mH TA = 25 °C TA = 70 °C IAS EAS PD TJ, Tstg 5 3.2 - 55 to 150 260 10 secs Steady State 30 ± 20 11 8 ± 50 1.5 30 45 1.8 1.1 Unit V 18 15 4.1 A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) t ≤ 10 sec Steady State Steady State Symbol RthJA RthJC Typical 20 56 1.8 Maximum 25 70 2.3 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Pro...