Document
SSM3J334R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
SSM3J334R
○Power Management Switch Applications
Unit: mm
• Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
-30
V
Gate-Source voltage
VGSS
± 20
V
Drain current
DC
ID (Note 1)
-4
A
Pulse
IDP (Note 1,2)
-16
Power dissipation
PD (Note 3)
1
W
t < 10s
2
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use. Note 2: PW ≤ 1ms, Duty ≤ 1% Note 3: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
SOT-23F
1: Gate 2: Source 3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-3Z1S
Weight: 11 mg (typ.)
Marking
3
KFL
Equivalent Circuit (Top View)
3
1
2
1
2
© 2010 - 2018
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2010-08
2018-10-04
SSM3J334R
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min Typ. Max Unit
Drain-Source breakdown voltage
Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time Turn-off time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source forward voltage
V (BR) DSS ID = -10 mA, VGS = 0 V
-30
V
V (BR) DSX ID = -10 mA, VGS = 10 V
.(Note 5) -21
V
IDSS VDS = -30 V, VGS = 0 V
-1
µA
IGSS VGS = ±16 V, VDS = 0 V
±10 µA
Vth
VDS = -10 V, ID = -100 µA
-0.8
-2.0
V
Yfs VDS = -10 V, ID = -1.0 A
(Note 4) 2.3 4.6
S
ID = -3.0 A, VGS = -10 V
(Note 4)
54
71
RDS (ON) ID = -2.0 A, VGS = -4.5 V
(Note 4)
80 105 mΩ
ID = -1.0 A, VGS = -4.0 V
(Note 4)
89 136
Ciss Coss Crss
VDS = -15 V, VGS = 0 V f = 1 MHz
280
55
pF
40
ton
VDD = -15 V, ID = -1.0 A
toff
VGS = 0 to -4.5 V, RG = 10 Ω
13
ns
22
Qg Qgs1 Qgd
VDD = -15 V, ID = -4.0 A, VGS = -10 V
5.9
0.8
nC
1.2
VDSF ID = 4.0 A, VGS = 0 V
(Note 4)
0.9 1.2
V
Note4: Pulse test Note5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the
drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit (a) Test Circuit
0 IN
−4.5V
10 µs
VDD = -15 V RG = 10 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C
RG
OUT
RL VDD
(b) VIN
0V
−4.5 V
(c) VOUT VDS (ON)
VDD
90%
10%
90%
10%
tr
tf
ton
toff
Notice on Usage
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-100μA for the SSM3J334R). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration
© 2010 - 2018
2
Toshiba Electronic Devices & Storage Corporation
2018-10-04
Drain current ID (A)
ID – VDS
-10
-10 V
-4.5 V
VGS = -4.0 V -8
-6
-4
-2 Common Source
Ta = 25 °C
Pulse test
0
0
-0.5
-1.0
-1.5
-2.0
Drain–source voltage VDS (V)
Drain current ID (A)
SSM3J334R
-100 -10
Common Source VDS = -10 V Pulse test
ID – VGS
-1
-0.1
-0.01
-0.001
-0.0001 0
Ta = 100 °C
−25 °C
25 °C
-1.0
-2.0
-3.0
-4.0
Gate–source voltage VGS (V)
RDS (ON) – VGS
200 ID = -1.0 A Common Source Pulse test
150
100
Ta = 100 °C
25 °C
50
− 25 °C
0
0
-4
-8
-12
-16
-20
Gate–source voltage VGS (V).