CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistors
Spec. No. : C306S5 Issued Date : 2011.01.07 ...
CYStech Electronics Corp.
General Purpose
PNP Epitaxial Planar
Transistors
Spec. No. : C306S5 Issued Date : 2011.01.07 Revised Date : Page No. : 1/6
(dual
transistors)
HBP1037S5
Features
Two BTA1037 chips in a SOT-353 package. Mounting possible with SOT-323 automatic mounting machines. Mounting cost and area can be cut in half. Excellent hFE linearity Pb-free lead plating and halogen free package.
Equivalent Circuit
HBP1037S5
Outline
SOT-353
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD Tj Tstg Limits -60 -50 -6 -150 -30 200(total) 150 -55~+150 Unit V V V mA mA mW °C °C
*1
Note : *1 150mW per element must not be exceeded
HBP1037S5 CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -60 -50 -6 200 80 Typ. -0.2 110 2.3 Max. -0.1 -0.1 -0.3 400 3.5 Unit V V V μA μA V MHz pF
Spec. No. : C306S5 Issued Date : 2011.01.07 Revised Date : Page No. : 2/6
Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-60V VEB=-6V IC=-100mA, IB=-10mA VCE=-6V, IC=-1mA VCE=-12V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device HBP1037S5 Package SOT-353 (Pb-fre...