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HBNP54S6R Dataheets PDF



Part Number HBNP54S6R
Manufacturers CYStech Electronics
Logo CYStech Electronics
Description General Purpose NPN PNP Epitaxial Planar Transistors
Datasheet HBNP54S6R DatasheetHBNP54S6R Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 1/9 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP54S6R Features • Includes a BTC3906 chip and BTA1514 chip in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Pb-free lead plating package. Equivalent Circuit HBNP54S6R Out.

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CYStech Electronics Corp. Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 1/9 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP54S6R Features • Includes a BTC3906 chip and BTA1514 chip in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Pb-free lead plating package. Equivalent Circuit HBNP54S6R Outline SOT-363 Ordering Information Device HBNP54S6R-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name HBNP54S6R CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) TR2 (PNP) 180 160 6 600 -160 -160 -6 -600 Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 2/9 Unit V V V mA mW °C °C 200(total) 150 -55~+150 *1 Note: *1 150mW per element must not be exceeded. Characteristics (Ta=25°C) •Q1, TR1 (NPN) Symbol Min. BVCBO 180 BVCEO 160 BVEBO 6 ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 100 *hFE2 120 *hFE3 40 fT 100 Cob Typ. 0.1 Max. 50 50 0.15 0.2 0.9 1.0 270 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=180V VEB=6V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% HBNP54S6R CYStek Product Specification CYStech Electronics Corp. • Q2, TR2 (PNP) Symbol Min. BVCBO -160 BVCEO -160 BVEBO -6 ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 90 *hFE2 120 *hFE3 40 fT 100 Cob - Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 3/9 Typ. - Max. -50 -50 -0.2 -0.3 -0.9 -1.0 270 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-160V VEB=-6V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-30V, IC=-10mA, f=100MHz VCB=-30V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Recommended Soldering Footprint HBNP54S6R CYStek Product Specification CYStech Electronics Corp. Q1, Typical Characteristics Emitter Grounded Output Characteristics 0.08 0.07 Collector Current---IC(A) Collector Current---IC(A) 1mA Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 4/9 Emitter Grounded Output Characteristics 0.18 0.16 5mA 0.06 0.05 0.04 0.03 0.02 0.01 0 01 23 45 Collector-to-Emitter Voltage---VCE(V) 500uA 400uA 300uA 200uA IB=100uA 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 2.5mA 2mA 1.5mA 1mA IB=500uA 6 012 34 56 Collector-to-Emitter Voltage---VCE(V) Current Gain vs Collector Current 1000 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C Saturation Voltage vs Collector Current 1000 VCESAT=10IB Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 100 Saturation Voltage---(mV) 1 10 Collector Current---IC (mA) 100 Current Gain---HFE 100 VCE=5V 10 0.1 10 1 10 Collector Current---IC(mA) 100 Saturation Voltage vs Collector Current 10000 VCESAT=50IB Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C On Voltage vs Collector Current 10000 VBEON@VCE=6V Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 1000 On Voltage---(mV) 1000 100 10 0.1 1 10 Collector Current---IC(mA) 100 100 1 10 Collector Current---IC (mA) 100 HBNP54S6R CYStek Product Specification CYStech Electronics Corp. Q1, Typical Characteristics(Cont.) Saturation Voltage vs Collector Current 10000 VBESAT@IC=10IB Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 5/9 Current Gain vs Collector Current 1000 Saturation Voltage---(mV) 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C Current Gain--- HFE VCE=5V 100 VCE=2V VCE=1V 100 1 10 Collector Current---IC(mA) 100 10 0.1 1 10 Collector Current--- IC(mA) 100 Cutoff Frequency vs Collector Current 1000 Cutoff Frequency---fT(MHz) VCE=10V Capacitance vs Reverse-biased Voltage 100 100 Capacitance---(pF) Cib 10 Cob 10 0.1 1 10 Collector Current---IC (mA) 100 1 0.1 1 10 Reverse-biased Voltage---VR(V) 100 Power Derating Curves 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA(℃) 200 Dual Single HBNP54S6R CYStek Product Specification CYStech Electronics Corp. Q2, Typical Characteristics Current Gain vs Collector Current 1000 HFE Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 6/9 Saturation Voltage vs Collector Cu.


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