Document
CYStech Electronics Corp.
Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 1/9
General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors)
HBNP54S6R
Features
• Includes a BTC3906 chip and BTA1514 chip in a SOT-363 package. • Mounting possible with SOT-323 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. • Pb-free lead plating package.
Equivalent Circuit
HBNP54S6R
Outline
SOT-363
Ordering Information
Device HBNP54S6R-0-T1-G Package SOT-363 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name
HBNP54S6R
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) TR2 (PNP)
180 160 6 600 -160 -160 -6 -600
Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 2/9
Unit V V V mA mW °C °C
200(total) 150 -55~+150
*1
Note: *1 150mW per element must not be exceeded.
Characteristics (Ta=25°C)
•Q1, TR1 (NPN) Symbol Min. BVCBO 180 BVCEO 160 BVEBO 6 ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 100 *hFE2 120 *hFE3 40 fT 100 Cob Typ. 0.1 Max. 50 50 0.15 0.2 0.9 1.0 270 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=180V VEB=6V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
HBNP54S6R
CYStek Product Specification
CYStech Electronics Corp.
• Q2, TR2 (PNP) Symbol Min. BVCBO -160 BVCEO -160 BVEBO -6 ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 90 *hFE2 120 *hFE3 40 fT 100 Cob -
Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 3/9
Typ. -
Max. -50 -50 -0.2 -0.3 -0.9 -1.0 270 6
Unit V V V nA nA V V V V MHz pF
Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-160V VEB=-6V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-30V, IC=-10mA, f=100MHz VCB=-30V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Recommended Soldering Footprint
HBNP54S6R
CYStek Product Specification
CYStech Electronics Corp.
Q1, Typical Characteristics
Emitter Grounded Output Characteristics
0.08 0.07 Collector Current---IC(A)
Collector Current---IC(A)
1mA
Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 4/9
Emitter Grounded Output Characteristics
0.18 0.16
5mA
0.06 0.05 0.04 0.03 0.02 0.01 0 01 23 45 Collector-to-Emitter Voltage---VCE(V)
500uA 400uA 300uA 200uA IB=100uA
0.14 0.12 0.1 0.08 0.06 0.04 0.02 0
2.5mA 2mA 1.5mA 1mA IB=500uA
6
012
34 56 Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C
Saturation Voltage vs Collector Current
1000
VCESAT=10IB Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C
100
Saturation Voltage---(mV) 1 10 Collector Current---IC (mA) 100
Current Gain---HFE
100
VCE=5V
10 0.1
10 1 10 Collector Current---IC(mA) 100
Saturation Voltage vs Collector Current
10000 VCESAT=50IB Saturation Voltage---(mV) Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C
On Voltage vs Collector Current
10000
VBEON@VCE=6V Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C
1000
On Voltage---(mV)
1000
100
10 0.1 1 10 Collector Current---IC(mA) 100
100 1 10 Collector Current---IC (mA) 100
HBNP54S6R
CYStek Product Specification
CYStech Electronics Corp.
Q1, Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
10000
VBESAT@IC=10IB
Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 5/9
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
1000
Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C
Current Gain--- HFE
VCE=5V
100
VCE=2V VCE=1V
100 1 10 Collector Current---IC(mA) 100
10 0.1 1 10 Collector Current--- IC(mA) 100
Cutoff Frequency vs Collector Current
1000 Cutoff Frequency---fT(MHz)
VCE=10V
Capacitance vs Reverse-biased Voltage
100
100
Capacitance---(pF)
Cib
10
Cob
10 0.1 1 10 Collector Current---IC (mA) 100
1 0.1 1 10 Reverse-biased Voltage---VR(V) 100
Power Derating Curves
250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA(℃) 200
Dual
Single
HBNP54S6R
CYStek Product Specification
CYStech Electronics Corp.
Q2, Typical Characteristics
Current Gain vs Collector Current
1000
HFE
Spec. No. : C904S6R Issued Date : 2013.10.21 Revised Date : Page No. : 6/9
Saturation Voltage vs Collector Cu.