D2491

2SD2491, 2SD2492 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Features Isolated package TO-126FM Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 http://www.Datasheet4U.com 2SD2491, 2SD2492 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC PC PC * Tj Tstg 1 2SD2491 160 160 5 100 1.35 8 150 –55 to +150 2SD2492 200 200 5 100 1.35 8 150 –55 to +150 Unit V V V mA W W °C °C Electrical Characteristics (Ta = 25°C) 2SD2491 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD2492 Max — — — 10 — 320 — 1.5 2 — — Min 200 200 5 — — 60 30 — — — — Typ — — — — — — — — — 140 3.8 Max — — — — 10 320 — 1.5 2 — — V V MHz pF Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0 f = 1 MHz Min 160 160 5 — — Typ — — — — — — — — — 140 3.8 DC current transfer ratio hFE1* DC current transfer ratio hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage 60 30 —...