2SK3525-01MR
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power ...
2SK3525-01MR
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Applications
Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Ratings Unit V 600 V DS A ID ±6 A ±24 ID(puls] V ±30 VGS A IAR *2 6 mJ EAS *1 193 kV/µs 20 dVDS/dt *4 *3 5 dV/dt kV/µs 2.16 PD Ta=25°C W Tc=25°C 58 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C *1 L=9.83mH, Vcc=60V *2 Tch < = BV DSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < =150°C *3 IF< *4 VDS < = 600V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery c...
