D600

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent h FE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (Pulse) CP ollector Dissipation Jj unction Temperature Sg torage Temperature Ss ymbo CBO CEO EBO C CP C C0 ondition 2K SB631, D60 (0 –)100 (0 –)100 2t SB631K, D600 (V –)12 (V –)12 (V –)5 (A –)1 (A –)2 1W Uni Tc=25˚C T Tst 8W 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Pl arameter CV ollector-to-Base Breakdown Voltage CV ollector-to-Emitter Brakdown Voltage EV mitter-to-Base Breakdown Voltage CI ollector Cutoff Current EI mitter Cutoff Current Ss ymbo (BR)CBO IC=(–)10µA, IE=0 (BR)CEO IC=(–)1mA, RBE=∞ (BR)EBO CBO EBO IE=(–)10µA, IC=5 0 VCB=(–)50V, IE=1 0 VEB=(–)4V, IC=1 0 Condition B0 631, D600 B0 631K, D600K B0 631, D600 B0 631K, D600K Ratings mp in (V –)10 (V –)12 (V –)10 (V –)12 (V –) (A –) (A –) µ µ tx y ma Unit Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit...