P2NA50FI

STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P2NA50 ST P2NA50FI s s s s s s s V DSS 500 V 500 V R DS(o n) <4 Ω <4Ω ID 2. 8 A 2A TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 1 2 3 1 2 3 APPLICATIONS s MEDIUM CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sym bol V DS VDG R V GS ID ID I DM ( ) P to t V ISO T st g Tj Para met er STP2NA5 0 Drain- Source Vol tage (V gs = 0) Drain- Gate Volt age (R gs =2 0 KΩ ) Gate-S ource Voltage Drain- Cur rent (cont inuous) at Tc =2 5 C2 Drain- Cur rent (cont inuous) at Tc =1 00 C1 Drain-Curre nt (Pulse d) Tot al Dissipa tion at T c =2 5 C7 Der at ing Fac tor Ins ulation W ithstand Voltage (DC) Storage T empe ratur e Max Oper ating Junc tion T emper ature o o o Val ue STP2NA 50F I 500 500 ± 30 .8 .8 11.2 5 0.6 -65 to 150 150 2 1.25 11.2 35 0.28 4000 Unit V V V A A A W W/ o C V o o C C ()Pulse width limited by safe operating area March 1996 1/6 http://www.Datasheet4U.com STP2NA50/FI THERMAL DATA TO 220 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 1.67 62 .5 0.5 30 0 IS OW ATT 220 3.57 o o o C/W C/ W C/ W o C Thermal Resis tan ce Junctio n-ambien t Max Thermal Resis...