DAN217S6R

CYStech Electronics Corp. High –speed multi-chip diode Spec. No. : C328S6 Issued Date : 2009.11.23 Revised Date : Page No. : 1/6 DAN217S6R Description The DAN217S6R consists of two set of high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT-363 plastic SMD package. Equivalent Circuit DAN217S6R Outline SOT-363 1：Anode 2：Cathode Features Small plastic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 450mA. Very low leakage current Pb-free package Applications High-speed switching in thick and thin-film circuits. DAN217S6R CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings, per diode @TA=25℃ Parameters Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Non-repetitive peak forward current @square wave, Tj=125℃ prior to surge Symbol VRRM VR IF t=1μs t=10ms t=1s IFSM Ptot Ptot Tj Tstg Min - Spec. No. : C328S6 Issued Date : 2009.11.23 Revised Date : Page No. : 2/6 Max 85 85 160 4 1 0.5 200 300 150 +150 Unit V V mA A A A mW mW °C °C Total power dissipation (Note 1) Total power dissipation (Note 2) Junction Temperature Storage Temperature -65 Electrical Characteristics, per diode @ Tj=25℃ unless otherwise specified Parameters Reverse breakdown voltage Forward voltage Reverse current Diode cap...