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UP1620 Dataheets PDF



Part Number UP1620
Manufacturers UNISONIC TECHNOLOGIES
Logo UNISONIC TECHNOLOGIES
Description PNP SILICON POWER TRANSISTOR
Datasheet UP1620 DatasheetUP1620 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UP1620 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON POWER TRANSISTOR  DESCRIPTION The U TC UP1 620 is a silico n PNP silicon po wer transis tor, it uses UT C’s a dvanced techn ology to provi de the customers with high co llector-emitter breakd own volta ge a nd ultra-h igh DC curren t gain, etc.  FEATURES * High collector-emitter breakdown voltage * Ultra-high DC current gain  ORDERING INFORMATION Package TO-3P Pin Assignment 1 2 3 B C E Packin.

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UNISONIC TECHNOLOGIES CO., LTD UP1620 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON POWER TRANSISTOR  DESCRIPTION The U TC UP1 620 is a silico n PNP silicon po wer transis tor, it uses UT C’s a dvanced techn ology to provi de the customers with high co llector-emitter breakd own volta ge a nd ultra-h igh DC curren t gain, etc.  FEATURES * High collector-emitter breakdown voltage * Ultra-high DC current gain  ORDERING INFORMATION Package TO-3P Pin Assignment 1 2 3 B C E Packing Tube Ordering Number Lead Free Halogen Free UP1620L-x-T3P-T UP1620G-x-T3P-T Note: Pin Assignment: A: Anode, K: Cathode  MARKING INFORMATION PACKAGE MARKING TO-3P www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-025.a http://www.Datasheet4U.com UP1620  Preliminary PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Base Current IB -1 A Collector Power Dissipation (TC=25°C) Pc 150 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) ICBO IEBO VCEO hFE VCE(sat) VBE(sat) fT Cob TEST CONDITIONS VCB=-160V, IE=0A VEB=-5V, IC=0A IC=-30mA -150 VCE=-4V, IC=-7A 500 IC=-7A, IB=-7mA IC=-7A, IB=-7mA VCE=-12V, IE=-2A VCB=-10V, f=1MHz, IE=0A MIN TYP MAX UNIT -100 µA -100 µA V 30000 -2.5 V -3.0 V 50 MHz 230 pF PARAMETER SYMBOL Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance 0  CLASSIFICATION OF hFE RANK RANGE O 5000 ~ 12000 P 6500 ~ 20000 Y 15000 ~ 30000 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R214-025.a UP1620 Preliminary PNP EPITAXIAL SILICON TRANSISTOR UTC a ssumes n o r esponsibility f or e quipment f ailures that r esult f rom u sing p roducts a t values th at exceed, ev en momentarily, r ated values (s uch as maximum rati ngs, ope rating condition ra nges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not de signed for us e i n l ife support appliances, de vices or systems w here malfunction of thes e products can be rea sonably expected to result in per sonal injury. R eproduction in whole or i n par t is prohibited without the prior w ritten con sent of the co pyright owner. The information presented i n this do cum ent does no t form part of any quotati on or contract, is believed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R214-025.a .


UN2488 UP1620 URFP064


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