UF3N25Z

UNISONIC TECHNOLOGIES CO., LTD UF3N25Z 3A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION 1 Power MOSFET SOT-223 The U TC UF3N25Z is an N -channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. 1 TO-252  FEATURES * R DS(ON) <1.7Ω @ V GS =10V, I D =3A * High switching speed * Typically 3.2nC low gate charge * 100% avalanche tested  1 TO-251 SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Package SOT-223 TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tape Reel Tube Tape Reel Tube Ordering Number Lead Free Halogen Free UF3N25ZL-AA3-R UF3N25ZG-AA3-R UF3N25ZL-TM3-T UF3N25ZG-TM3-T UF3N25ZL-TN3-R UF3N25ZG-TN3-R UF3N25ZL-TN3-T UF3N25ZG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source UF3N25ZL-AA3-R (1)Packing Type (2)Package Type (3)Lead Free (1) R: Tape Reel, T: Tube (2) AA3: SOT-223, TM3: TO-251, TN3: TO-252 (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-760.D http://www.Datasheet4U.com UF3N25Z  Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 250 V Gate-Source Voltage V GSS ±20 V Continuous ID 3 A Continuous Drain Current Pulsed I DM 12 A Avalanche Energy E AS 52 mJ SOT-223 0.8 W Power Dissipation PD TO-251/TO-252 1.14 W Junction Temperature TJ +150 °C Storage Temperature Range T STG -...