UF2N30Z

UNISONIC TECHNOLOGIES CO., LTD UF2N30Z 2A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The U TC UF2N30Z is an N -channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. 1 SOT-223  FEATURES * R DS(ON) <2Ω @ V GS =10V, I D =2A * High switching speed * Typically 3.2nC low gate charge * 100% avalanche tested  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION 1 G Pin Assignment 2 3 D S Packing Tape Reel Ordering Number Package Lead Free Halogen Free UF2N30ZL-AA3-R UF2N30ZG-AA3-R SOT-223 Note: Pin Assignment: G: Gate D: Drain S: Source UF2N30ZL-AA3-R (1)Packing Type (2)Package Type (3)Lead Free (1) R: Tape Reel (2) AA3: SOT-223 (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-761.B http://www.Datasheet4U.com UF2N30Z  Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT V DSS 300 V V GSS ±20 V Continuous ID 2 A Continuous Drain Current Pulsed I DM 8 A Avalanche Energy E AS 52 mJ Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature Range T STG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTI...