IPP111N15N3G

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Package Marking PG-TO263-3 108N15N PG-TO220-3 111N15N PG-TO262-3 111N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 83 59 332 330 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=83 A, R GS=25 Ω mJ V W °C T C=25 °C 214 -55 ... 175 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.1 page 1 2009-12-01 http://www.Datasheet4U.com IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area 3) 0.7 62 40 K/W Electrical characteristics, at T j=25 °C, unless other...