MSF6N70

MSF6N70 700V N-Channel MOSFET GENERAL DESCRIPTION The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications FEATURES Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant / Halogen free package available Absolute Maximum Ratings Parameter Drain-Source Voltage (Tc=25°C unless otherwise noted) Symbol VDS ID ID IDM VGS EAS IAR EAR dV/dt PD Tj, Tstg Value 700 6.0 3.5 22 ±30 350 5.5 14.7 5.5 48 0.38 -55~+150 Unit V A A A V mJ A mJ V/ns W W °C Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dV/dt Power Dissipation (TC=25°C) Power Dissipation (TC=100°C) Operating Junction and Storage Temperature NOTE: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤5.5A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ©Bruckewell Technology Corporation Rev. B -2013 http://www.Datasheet4U.com MSF6N70 700V N-Channel MOSFET Characteristics (Tc=25°C, unless otherwise specified) Symbo...