N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD
18N65
18A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 18N65 uses UTC’s advanced pr...
Description
UNISONIC TECHNOLOGIES CO., LTD
18N65
18A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18N65L-T3P-T
18N65G-T3P-T
18N65L-T3N-T
18N65G-T3N-T
18N65L-T47-T
18N65G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-3P TO-3PN TO-247
Pin Assignment 123 GDS GDS GDS
Packing
Tube Tube Tube
MARKING
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-771.E
18N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage Continuous Drain Current
VGSS ±30 V ID 18 A
Pulsed Drain Current Avalanche Energy
Single Pulsed
IDM EAS
45 938 (Note 2)
A mJ
Peak Diode Recovery dv/dt
dv/dt
10 V/ns
Power Dissipation
TO-3P/TO-3PN TO-247
PD
390 W 357 W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Ab...
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