MTP425I3

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C391I3 Issued Date : 2012.11.27 Revised Date : Page No. : 1/8 MTP425I3 Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating package BVDSS ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -30V -50A 10mΩ(typ) 14mΩ(typ) Symbol MTP425I3 Outline TO-251AB TO-251S G：Gate D：Drain S：Source G D S G D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C Continuous Drain Current @VGS=-10V, TC=100°C Continuous Drain Current @VGS=-10V, TA=25°C Continuous Drain Current @VGS=-10V, TA=100°C Pulsed Drain Current TC=25℃ TC=100℃ Power Dissipation TA=25℃ TA=100℃ Single Pulse Avalanche Energy Single Pulse Avalanche Current Operating Junction and Storage Temperature MTP425I3 VDS VGS ID IDM PD EAS IAS Tj, Tstg -30 ±25 -50 -32 -11 -7 -100 *1 50 *4 20 *4 2.5 1.0 30 *2 -11 -55~+150 V A W mJ A °C CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C391I3 Issued Date : 2012.11.27 Revised Date : Page No. : 2/8 Value 2.5 50 *3 Note : *1. Pulse width limited by safe operating area. *2 . Tj=25°C, VDD=-15V, L=0.5mH, RG=25Ω. *3 . The value of Rth,j-a is measured with the device mount...