MTP3J36Y3

CYStech Electronics Corp. Spec. No. : C698Y3 Issued Date : 2012.07.13 Revised Date : Page No. : 1/ 8 -20V P-CHANNEL Enhancement Mode MOSFET BVDSS ID RDSON@VGS=-4.5V, ID=-350mA RDSON@VGS=-4V, ID=-300mA RDSON@VGS=-2.5V, ID=-300mA RDSON@VGS=-1.8V, ID=-150mA MTP3J36Y3 Features -20V -350mA 0.64Ω(typ) 0.68Ω(typ) 1.1Ω(typ) 1.7Ω(typ) Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V. Compact industrial standard SOT-523 surface mount package. Pb-free package. Equivalent Circuit MTP3J36Y3 Outline SOT-723 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-4.5V Continuous Drain Current @ TA=85°C, VGS=-4.5V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Note : 1. Pulse width≤ 10μs, duty cycle≤2%. Symbol VDS VGS ID ID IDM PD Rth,ja Tj, Tstg Limits -20 ±10 -0.35 -0.25 -1.4 150 833 -55~+150 Unit V A mW °C/W °C MTP3J36Y3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS Min. -20 -0.5 Typ. -0.8 0.4 0.64 0.68 1.1 1.7 59 21 15 5 6 42 14 1.5 0.28 0.44 -0.88 Max. -1.2 ±10 -1 -10 0.9 0.9 1.4 2.7 -0.35 -1.4 -1.2 Unit V V S μA Spec. No. : C698Y3 Issued Date : 2012.07.13...