MTP3J15Y3

CYStech Electronics Corp. 50V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 1/ 8 MTP3J15Y3 Features Low gate charge Excellent thermal and electrical capabilities Pb-free lead plating and halogen-free package BVDSS ID RDSON@-10V RDSON@-5V RDSON@-4V [email protected] -50V -130mA 8Ω (MAX) 10Ω (MAX) 12Ω (MAX) 32Ω (MAX) Equivalent Circuit MTP3J15Y3 Outline SOT-723 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-10V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ (Note 2) Thermal Resistance, Junction-to-Ambient (Note 2) Operating Junction and Storage Temperature Range Note : 1. Pulse width≤ 10μs, duty cycle≤2%. 2. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s. Symbol VDS VGS ID IDM PD Rth,ja Tj, Tstg Limits -50 ±20 -130 -520 150 833 -55~+150 Unit V V mA mA mW °C/W °C MTP3J15Y3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS Min. -50 -1 20 Typ. -1.4 5 6 25 7 2 2.5 2 7.3 3 1.2 -0.85 Max. -2 ±10 -1 -25 8 10 12 32 -130 -520 -1.2 Unit V V mS μA Spec. No. : C465Y3 Issued Date : 2012.04.13 Revised Date : 2012.05.19 Page No. : 2/ 8 Test Conditions VGS=0V, ID=-250μA VDS=VGS, ID=-1mA VDS=-3V, ID=-10mA VGS=±20V...