ESD protected N-Channel MOSFET
CYStech Electronics Corp.
ESD protected N-Channel Enhancement Mode MOSFET
Spec. No. : C800S3 Issued Date : 2010.07.19 R...
Description
CYStech Electronics Corp.
ESD protected N-Channel Enhancement Mode MOSFET
Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 1/8
MTNK5S3
Description
BVDSS ID RDSON(MAX)
30V 100mA 8Ω
Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & halogen-free package
Symbol
MTNK5S3
Outline
SOT-323 D G
G:Gate S:Source D:Drain
G S
S
Ordering Information
Device MTNK5S3-0-T1-G Package SOT-323 (Pb-free lead plating & halogen-free package) Shipping 3000 pcs / Tape & Reel
MTNK5S3
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current
Continuous Pulsed Continuous Pulsed
Spec. No. : C800S3 Issued Date : 2010.07.19 Revised Date : 2013.09.09 Page No. : 2/8
Symbol BVDSS
VGS ID IDP IDR IDRP PD Tj ; Tstg Rth,ja
Total Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1% *2. With each pin mounted on the recommended lands. *3. Human body model, 1.5kΩ in series with 100pF
Limits 30 ±20 ±100 ±200 ±100 ±200 200 750 -55~+150 556
*1 *1 *2 *3
Unit V V mA mA mA mA mW V °C °C/W
Electrical Characteristics (Ta=25°C)
Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) Min. 30 0.8 20 Typ. 1.3 3.4 6.9 50 12.5 7.3 ...
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