MTNK1S3

CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2009.11.12 Page No. : 1/7 MTNK1S3 Description The MTNK1S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free package Symbol MTNK1S3 D Outline SOT-323 D G G S G：Gate S S：Source D：Drain MTN7002ZHS3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature Continuous Pulsed Continuous Pulsed Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2009.11.12 Page No. : 2/7 Symbol VDSS VGSS ID IDP IDR IDRP PD TCH Tstg Limits 60 ±20 115 700 *1 115 700 *1 200 *2 1250 *3 +150 -55~+150 Unit V V mA mA mA mA mW V °C °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 3.6 5.5 RDS(ON)* 3 5 GFS 100 Ciss 30.5 Coss 9.3 Crss 5.9 - Unit V V μA μA Ω mS pF Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=100mA, VGS=5V ID=100mA, VGS=10V VDS=10...