N-CHANNEL MOSFET
CYStech Electronics Corp.
N-CHANNEL MOSFET
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.09 Page N...
Description
CYStech Electronics Corp.
N-CHANNEL MOSFET
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.09 Page No. : 1/7
MTN7002ZAS3
Description
The MTN7002ZAS3 is a N-channel enhancement-mode MOSFET.
Features
Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free package
Symbol
MTN7002ZAS3 D
Outline
SOT-323 D
G G S
G:Gate S S:Source D:Drain
Ordering Information
Device MTN7002ZAS3-0-T1-G Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel
MTN7002ZAS3
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature
Continuous Pulsed Continuous Pulsed
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.09 Page No. : 2/7
Symbol VDSS
VGSS ID IDP IDR IDRP PD TCH Tstg
Limits 60 ±20 200 800 *1 200 800 *1 200 *2 1500 *3 +150 -55~+150
Unit V V mA mA mA mA mW V °C °C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 1.5 3 RDS(ON)* 1.7 3.2 1.9 3.3 GFS 100 Ciss 29 Co...
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