MTN6515J3

CYStech Electronics Corp. N -Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C739J3 Issued Date : 2009.10.19 Revised Date : 2013.12.25 Page No. : 1/9 MTN6515J3 Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package BVDSS 150V ID RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=5V, ID=10A RDS(ON)@VGS=3V, ID=3A 20A 60mΩ(typ) 59mΩ(typ) 60mΩ(typ) Equivalent Circuit MTN6515J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Sy mbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% MTN6515J3 VDS 150 VGS ID 20 ID 14 IDM 60 IAS 20 EAS 5 EAR 2.5 Pd Tj, Tstg ±16 V A mJ 60 30 -55~+175 W °C CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Thermal Data Parameter Sym Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max bol Rth,j-c 2.5 Rth,j-a 100 Spec. No. : C739J3 Issued Date : 2009.10.19 Revised Date : 2013.12.25 Page No. : 2/9 Value Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise sp...