MTN6515H8

CYStech Electronics Corp. N-Channel Logic Level Enhancement Mode Power MOSFET Spec. No. : C739H8 Issued Date : 2009.12.09 Revised Date : 2010.06.28 Page No. : 1/8 MTN6515H8 Description BVDSS ID RDSON(max) 150V 20A 65mΩ The MTN6515H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating package Symbol MTN6515H8 Outline Power pak (EDFN5×6) Pin 1 G：Gate D：Drain S：Source MTN6515H8 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Spec. No. : C739H8 Issued Date : 2009.12.09 Revised Date : 2010.06.28 Page No. : 2/8 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25℃ Total Power Dissipation TC=100℃ Operating Junction and Storage Temperature Range VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg 150 ±16 20 15 80 *1 20 5 2.5 *2 60 32 -55~+175 V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 50 *3 Unit °C/W °C/W...