DUAL MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD MGBR40V100C
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
Preliminary
DIODE
The UTC M...
Description
UNISONIC TECHNOLOGIES CO., LTD MGBR40V100C
DUAL MOS GATED BARRIER RECTIFIER
DESCRIPTION
Preliminary
DIODE
The UTC MGBR40V100C is a dua l mos gat ed barrier rectifiers, it uses UT C’s a dvanced tech nology to pr ovide cust omers with lo w forward voltage drop and high switching speed, etc.
FEATURES
* Very low forward voltage drop * High switching speed
SYMBOL
ORDERING INFORMATION
Package TO-220 Pin Assignment 1 2 3 A K A Packing Tube
Ordering Number Lead Free Halogen Free MGBR40V100CL-TA3-T MGBR40V100CG-TA3-T Note: Pin Assignment: A: Anode, K: Cathode
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QW-R601-182.a
http://www.Datasheet4U.com
MGBR40V100C
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. UNIT PARAMETER SYMBOL RATINGS DC Blocking Voltage VRM 100 V Working Peak Reverse Voltage VRWM 100 V Peak Repetitive Reverse Voltage VRRM 100 V Per Leg 20 A Average Rectified Output Current Per Device IO Total 4 0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single IFSM 300 A Half Sine-Wave Superimposed on Rated Load Operating Junction Temperature TJ -65~ +150 °C Storage Temperature TSTG -65~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation i...
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