DUAL MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD MGBR30S50C
Preliminary DIODE
DUAL MOS GATED BARRIER RECTIFIERS
DESCRIPTION
The U TC M...
Description
UNISONIC TECHNOLOGIES CO., LTD MGBR30S50C
Preliminary DIODE
DUAL MOS GATED BARRIER RECTIFIERS
DESCRIPTION
The U TC MGBR30S50C is a du al mos gated barr ier rect ifiers, it uses UT C’s a dvanced tech nology to pr ovide cust omers with lo w forward voltage drop and high switching speed, etc.
FEATURES
* Super low forward voltage drop * High switching speed
SYMBOL
ORDERING INFORMATION
Package TO-220 Pin Assignment 1 2 3 A K A Packing Tube
Ordering Number Lead Free Halogen Free MGBR30S50CL-TA3-T MGBR30S50CG-TA3-T Note: Pin Assignment: A: Anode, K: Cathode
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QW-R601-135.b
http://www.Datasheet4U.com
MGBR30S50C
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 50 V Working Peak Reverse Voltage VRWM 50 V Peak Repetitive Reverse Voltage VRRM 50 V Per Leg 15 A Average Rectified Output Current Per Device IO Total 3 0 A Non-Repetitive Peak Forward Surge Current 8.3ms IFSM 250 A Single Half Sine-Wave Superimposed on Rated Load Operating Junction Temperature TJ -65~ +150 °C Storage Temperature TSTG -65~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not...
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