IR2118SPBF

Data Sheet No. PD60146 Rev O IR2117(S)/IR2118(S) & (PbF) SINGLE CHANNEL DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout CMOS Schmitt-triggered inputs with pull-down Output in phase with input (IR2117) or out of phase with input (IR2118) Also available LEAD-FREE Product Summary VOFFSET IO+/VOUT ton/off (typ.) 600V max. 200 mA / 420 mA 10 - 20V 125 & 105 ns Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver . Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buf fer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts. Packages 8-Lead PDIP IR2117/IR2118 8-Lead SOIC IR2117S/IR2118S Typical Connection up to 600V VCC IN VCC IN COM VB HO VS TO LOAD IR2117 up to 600V VCC IN VCC IN COM VB HO VS TO LOAD (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only . Please refer to our Application Notes and DesignT ips for proper circuit board layout. IR2118 www.irf.com 1 http://www.Datasheet4U.com IR2117(S)/IR2118(S) & (PbF)...