MJE243G (NPN), MJE253G (PNP)
Complementary Silicon Power Plastic Transistors
These devices are designed for low power ...
MJE243G (
NPN), MJE253G (
PNP)
Complementary Silicon Power Plastic
Transistors
These devices are designed for low power audio amplifier and low−current, high−speed switching applications.
Features
High Collector−Emitter Sustaining Voltage High DC Current Gain Low Collector−Emitter Saturation Voltage High Current Gain Bandwidth Product Annular Construction for Low Leakages These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation
@ TC = 25_C Derate above 25_C
VCEO VCB VEB IC ICM IB PD
100
Vdc
100
Vdc
7.0
Vdc
4.0
Adc
8.0
Adc
1.0
Adc
15
W
120
mW/_C
Total Power Dissipation @ TA = 25_C Derate above 25_C
PD
1.5
W
12
mW/_C
Operating and Storage Junction Temperature Range
TJ, Tstg –65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, Junction−to−Case
RqJC
8.34
Thermal Resistance, Junction−to−Ambient RqJA
83.4
Unit _C/W _C/W
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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