P11NB40FP

® STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P11NB4 0 ST P11NB4 0FP s s s s s V DSS 400 V 400 V R DS(on) <0 .55 Ω <0 .55 Ω ID 10 .7 A 6.0 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P to t dv /dt ( 1 ) V ISO Tst g Tj Parameter Dr ai n-sour ce Voltage (V GS =0 ) Drain- gate Volt age (R GS =2 0 k Ω ) G ate-so urc e Vo ltage Dra in Curre nt (co ntinuous) at Tc =2 5 C Dra in Curre nt (co ntinuous) at Tc =1 00 oC6 Drain Curren t (pu lsed) T ota l Dissipation at Tc =2 5 o C Dera ting Factor Peak Dio de Rec overy volt age slop e Insu lation W ithst and Voltage (DC) Stor age Tempe rat ure Max. Operating Junc tion Tempe rature o TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value ST P1...