DatasheetsPDF.com

FDD8444L_F085

FAIRCHILD

N-Channel PowerTrench MOSFET

FDD8444L_F085 N-Channel PowerTrench® MOSFET January 2009 FDD8444L_F085 ® N-Channel PowerTrench MOSFET 40V, 50A, 6.0mΩ ...


FAIRCHILD

FDD8444L_F085

File Download Download FDD8444L_F085 Datasheet


Description
FDD8444L_F085 N-Channel PowerTrench® MOSFET January 2009 FDD8444L_F085 ® N-Channel PowerTrench MOSFET 40V, 50A, 6.0mΩ Features „ Typ rDS(on) = 3.8mΩ at VGS = 5V, ID = 50A „ Typ Qg(tot) = 46nC at VGS = 5V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse/ Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant A REE I DF tm Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Transmission „ Distributed Power Architecture and VRMs „ Primary Switch for 12V and 24V systems M ENTATIO LE N MP ©2009 Fairchild Semiconductor Corporation FDD8444L_F085 Rev A (W) LE 1 www.fairchildsemi.com http://www.Datasheet4U.com FDD8444L_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Gate to Source Voltage Drain Current Continuous (TC < 150°C, VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC1 (Note 2) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Parameter Ratings 40 ±20 50 16 See Figure 4 295 153 .02 -55 to +175 mJ W W/oC oC Units V V A TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area 2 0.98 52 o o C/W C/W Package Marking and Ordering Information Device Marking FDD8444L Device FDD8444L_F085 Package TO-252AA Reel Size 13” Tape W...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)