Document
SPP2345
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES -20V/-3.3A,RDS(ON)=70mΩ@VGS=-4.5V -20V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V -20V/-2.3A,RDS(ON)=130mΩ@VGS=-1.8V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC
current capability SOT-23 package design
PIN CONFIGURATION(SOT-23)
PART MARKING
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SPP2345
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
ORDERING INFORMATION
Part Number
Package
SPP2345S23RGB
SOT-23
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP2345S23RGB : Tape Reel ; Pb – Free; Halogen – Free
Description Gate Source Drain
Part Marking S45
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation Operating Junction Temperature
TA=25℃ TA=70℃
Storage Temperature Range Thermal Resistance-Junction to Ambient
Symbol VDSS VGSS ID
IDM IS
PD TJ TSTG RθJA
Typical -20
±12 -3.5 -2.8 -10
-1.6 1.25 0.8 150 -55/150 120
Unit V V A
A A
W ℃ ℃ ℃/W
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SPP2345
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±10V
IDSS ID(on) RDS(on)
VDS=-16V,VGS=0V
VDS=-16V,VGS=0V TJ=55℃ VDS≦-5V,VGS=-4.5V VDS≦-5V,VGS=-2.5V
VGS=-4.5V,ID=-3.3A VGS=-2.5V,ID=-2.8A VGS=-1.8V,ID=-2.3A
gfs VDS=-5V,ID=-3.5A
VSD IS=-1.5A,VGS=0V
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=-6V,VGS=-4.5V ID≡-2.8A
VDS=-6V,VGS=0V f=1MHz
VDD=-6V,RL=6Ω ID≡-1.0A,VGEN=-4.5V RG=6Ω
Min. Typ Max. Unit
-20 -0.45
V -0.90
±100 nA -1 uA -10
-4
A
-2
60
70
72
85 mΩ
115 130
8.5
S
-0.8 -1.2 V
4.8
8
1.0
nC
1.0
485
85
pF
40
10
16
13
23
nS
18
25
15
20
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SPP2345
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP2345
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP2345
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP2345
P-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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