SPP1015

SPP1015 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1015 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Drivers : Relays/Solenoids/Lamps/Hammers  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers FEATURES  P-Channel -20V/0.45A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.35A,RDS(ON)=700mΩ@VGS=-2.5V -20V/0.25A,RDS(ON)=1500mΩ@VGS=-1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  ESD protected  SOT-523 (SC-89) package design PIN CONFIGURATION (SOT-523 / SC-89) PART MARKING 2020/04/15 Ver.5 Page 1 SPP1015 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPP1015S52RGB SOT-523 ※ SPP1015S52RGB : Tape Reel ; Pb – Free, Halogen – Free Part Marking 5Y ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pul...