SPN5001
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN5001 is the N-Channel enhancement mode power field effect ...
SPN5001
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN5001 is the N-Channel enhancement mode power field effect
transistor which is produced with high voltage BiCMOS technology. This device is particularly suited for reducing the no load consumption in PC power, TV power and Adapter.
APPLICATIONS Desk PC Power Supply AC adapter LCD TC Power Supply
FEATURES 600V/27mA , RDS(ON)=300Ω@VGS=10V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC
current capability SOT-23 package design
PIN CONFIGURATION(SOT-23)
2020/01/30 Ver.3
PART MARKING 501YW
YW: Date Code
Page 1
SPN5001
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPN5001S23RGB
SOT-23
※ SPN5001S23RGB : Tape Reel ; Pb – Free ; Halogen – Free
Part Marking 501
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate –Source Voltage - Continuous
VGSS
Continuous Drain Current
TA=25℃
ID
Power Dissipation Operating Junction Temperature
TA=25℃
PD
TJ
Storage Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical 600 ±20 27 0.5
-55 ~ 150 -55 ~ 150
250
Unit V V mA W ℃ ℃
℃/W
2020/01/30 Ver.3
Page 2
SPN5001
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static Drain-Source ...