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BAS16N3

CYStech Electronics

High speed switching diode

CYStech Electronics Corp. High –speed switching diode Spec. No. : C303N3-A Issued Date : 2005.12.02 Revised Date : 2013...


CYStech Electronics

BAS16N3

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Description
CYStech Electronics Corp. High –speed switching diode Spec. No. : C303N3-A Issued Date : 2005.12.02 Revised Date : 2013.09.27 Page No. : 1/6 BAS16N3 Description The BAS16N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in a small SOT-23 plastic SMD package. Equivalent Circuit BAS16N3 Outline SOT-23 1 Cathode 2 3 1:Anode 2:Not Connected 3:Cathode Anode NC Features Small plastic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 100V Repetitive peak reverse voltage: max. 110V Repetitive peak forward current: max. 500mA. Applications High-speed switching in hybrid thick and thin-film circuits. Ordering Information Device BAS16N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BAS16N3 CYStek Product Specification http://www.Datasheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings @TA=25℃ Parameters Sym Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current (Note 1) Repetitive peak forward current Non-repetitive peak forward current @square wave, Tj=25℃ prior to surge t=1μs t=1ms t=1s Total power dissipation (Note 1) Ptot Junction Temperature Storage Temperature Note 1: Device mounted on an FR...




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