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MMBZ5252ELT1G Dataheets PDF



Part Number MMBZ5252ELT1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Zener Voltage Regulators
Datasheet MMBZ5252ELT1G DatasheetMMBZ5252ELT1G Datasheet (PDF)

MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is of fered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Features http://onsemi.com 3 Cathode 1 Anode • • • • • • • • • 225 mW Rating on FR−4 or FR−5 Board Z.

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MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is of fered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. Features http://onsemi.com 3 Cathode 1 Anode • • • • • • • • • 225 mW Rating on FR−4 or FR−5 Board Zener Voltage Range − 2.4 V to 91 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) AEC−Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available MARKING DIAGRAM 3 1 2 SOT−23 CASE 318 STYLE 8 1 Bxx M G G Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol Ppk PD Max 225 Unit W Bxx xx M G = Device Code = (Refer to page 2) = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 260°C for 10 Seconds ORDERING INFORMATION Device MMBZ52xxELT1G SZMMBZ52xxELT1G 225 1.8 556 300 2.4 417 −65 to +150 mW mW/°C °C/W mW mW/°C °C/W °C Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel MMBZ52xxELT3G RqJA PD RqJA TJ, Tstg †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. © Semiconductor Components Industries, LLC, 2011 DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. December, 2011 − Rev. 7 1 Publication Order Number: MMBZ5221ELT1/D http://www.Datasheet4U.com MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol VZ IZT ZZT IZK ZZK IR VR IF VF Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF VZ VR IR VF IZT V IF I Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 4) Device Marking BE2 BE7 BE9 BF1 BF2 BF3 BF4 BF6 BF7 BF8 BF9 BG2 BG3 BG5 BG6 BG7 BG8 BG9 BH2 BH4 VZ (V) Min 2.28 3.13 3.70 4.08 4.46 4.84 5.32 5.89 6.46 7.12 7.79 8.65 9.50 11.40 12.35 13.30 14.25 15.20 17.10 19.00 Nom 2.4 3.3 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 12 13 14 15 16 18 20 Max 2.52 3.47 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.55 10.50 12.60 13.65 14.70 15.75 16.80 18.90 21.00 @ IZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9 8.5 7.8 7 6.2 Zener Impedance ZZT @ IZT W 30 28 23 22 19 17 11 7 5 6 8 10 17 30 13 15 16 17 21 25 ZZK @ IZK W 1200 1600 1900 2000 1900 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Leakage Current IR @ VR mA 100 25 10 5 5 5 5 5 3 3 3 3 3 1 0.5 0.1 0.1 0.1 0.1 0.1 V 1 1 1 1 2 2 3 4 5 6 6.5 7 8 9.1 9.9 10 11 12 14 15 Device* MMBZ5221ELT1/T3G MMBZ5226ELT1/T3G MMBZ5228ELT1/T3G MMBZ5229ELT1/T3G MMBZ5230ELT1/T3G MMBZ5231ELT1/T3G MMBZ5232ELT1/T3G MMBZ5234ELT1/T3G MMBZ5235ELT1/T3G MMBZ5236ELT1/T3G MMBZ5237ELT1/T3G MMBZ5239ELT1/T3G MMBZ5240ELT1/T3G MMBZ5242ELT1/T3G MMBZ5243ELT1/T3G MMBZ5244ELT1/T3G MMBZ5245ELT1/T3G MMBZ5246ELT1G† MMBZ5248ELT1/T1G MMBZ5250ELT1/T3G 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *Includes SZ−prefix devices where applica.


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