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OD-663

OPTO DIODE

HIGH-POWER GaAlAs IRLED ILLUMINATOR

HIGH-POWER GaAlAs IRLED ILLUMINATOR FEATURES • • • • • • Super high power output 880nm peak emission Three chips connect...


OPTO DIODE

OD-663

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Description
HIGH-POWER GaAlAs IRLED ILLUMINATOR FEATURES Super high power output 880nm peak emission Three chips connected in series TO-66 header for good heat dissipation 100% tested for power output Electrically isolated case OD-663 .053 .067 LED CHIPS .140 R (REF. ONLY) .342 R .325 . 142 . 152 EPOXY .084 .096 .030 .426 .432 .955 .965 1.225 1.255 .480 .350 MIN CATHODE .170 MAX DIMPLE .680 .700 ANODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, λP Spectral Bandwidth at 50%, ∆λ Half Intensity Beam Angle, θ Forward Voltage, VF Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 300mA IF = 8A IF = 50mA IF = 300mA IR = 10µA VR = 0V MIN 150 TYP 170 3500 880 120 5 4.5 30 30 1 1 80 MAX UNITS mW nm Deg nm Reverse Breakdown Voltage, VR 5 Volts Volts µsec µsec pF ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 400mA 5V 8A 2W Peak Forward Current (10µs, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55°C to 100°C 60°C/W Typical 16°C/W Typical 100°C 1Heat transfer minimized by measuring in still air with minimum heat...




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