Document
SKM600GA12V
SEMITRANS® 4
SKM600GA12V
Features
• V-IGBT = 6. Generation Trench V-IGBT (Fuji)
• CAL4 = Soft switching 4. Generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Copper Bonding)
• UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt
Typical Applications*
• AC inverter drives • UPS • Electronic welders • Switched reluctance motor
Remarks
• Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES tpsc Tj
VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
Rth(j-c)
IC = 600 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel
Tj = 25 °C Tj = 150 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 24 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
VCC = 600 V
Tj = 150 °C
IC = 600 A VGE = ±15 V RG on = 2.5 RG off = 2.5
Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 9000 A/µs Tj = 150 °C
di/dtoff = 6000 A/µs
du/dtoff = 6400 V/ Tj = 150 °C
µs
per IGBT
Values
1200 908 692 600 1800 -20 ... 20
10
-40 ... 175
707 529 600 1800 3240 -40 ... 175
500 -40 ... 125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A °C V
min.
typ.
max. Unit
1.75
2.20
V
2.20
2.50
V
0.94
1.04
V
0.88
0.98
V
1.35
1.93 m
2.20
2.53 m
5.5
6
6.5
V
0.1
0.3
mA
mA
36
nF
3.55
nF
3.536
nF
6620
nC
1.25
710
ns
85
ns
76
mJ
930
ns
98
ns
76
mJ
0.049 K/W
GA
© by SEMIKRON
Rev. 4 – 15.08.2012
1
SKM600GA12V
SEMITRANS® 4
SKM600GA12V
Features
• V-IGBT = 6. Generation Trench V-IGBT (Fuji)
• CAL4 = Soft switching 4. Generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Copper Bonding)
• UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt
Typical Applications*
• AC inverter drives • UPS • Electronic welders • Switched reluctance motor
Remarks
• Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150°
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 600 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 150 °C
VF0
chiplevel
Tj = 25 °C Tj = 150 °C
rF
IRRM Qrr Err Rth(j-c)
chiplevel
Tj = 25 °C Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 8600 A/µs VGE = ±15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per diode
Module
LCE RCC'+EE'
term.