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SKM600GA12V Dataheets PDF



Part Number SKM600GA12V
Manufacturers Semikron
Logo Semikron
Description IGBT
Datasheet SKM600GA12V DatasheetSKM600GA12V Datasheet (PDF)

SKM600GA12V SEMITRANS® 4 SKM600GA12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • AC inverter drives • UPS • Electronic welders • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C .

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SKM600GA12V SEMITRANS® 4 SKM600GA12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • AC inverter drives • UPS • Electronic welders • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 24 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V VCC = 600 V Tj = 150 °C IC = 600 A VGE = ±15 V RG on = 2.5  RG off = 2.5  Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 9000 A/µs Tj = 150 °C di/dtoff = 6000 A/µs du/dtoff = 6400 V/ Tj = 150 °C µs per IGBT Values 1200 908 692 600 1800 -20 ... 20 10 -40 ... 175 707 529 600 1800 3240 -40 ... 175 500 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min. typ. max. Unit 1.75 2.20 V 2.20 2.50 V 0.94 1.04 V 0.88 0.98 V 1.35 1.93 m 2.20 2.53 m 5.5 6 6.5 V 0.1 0.3 mA mA 36 nF 3.55 nF 3.536 nF 6620 nC 1.25  710 ns 85 ns 76 mJ 930 ns 98 ns 76 mJ 0.049 K/W GA © by SEMIKRON Rev. 4 – 15.08.2012 1 SKM600GA12V SEMITRANS® 4 SKM600GA12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • AC inverter drives • UPS • Electronic welders • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Characteristics Symbol Conditions Inverse diode VF = VEC IF = 600 A VGE = 0 V chiplevel Tj = 25 °C Tj = 150 °C VF0 chiplevel Tj = 25 °C Tj = 150 °C rF IRRM Qrr Err Rth(j-c) chiplevel Tj = 25 °C Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 8600 A/µs VGE = ±15 V Tj = 150 °C VCC = 600 V Tj = 150 °C per diode Module LCE RCC'+EE' term.


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