NEXCW473Z5.5V10.7X5.5TRF Datasheet PDF

V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTAB...

V-Chip Memory Back-Up Capacitors FEATURES DOUBLE LAYER CONSTRUCTION POWER BACK-UP FOR CMOS DEVICES SURFACE MOUNTABLE V-CHIP STYLE LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test +85°C 240 hours Temperature Cycling (5 cycles, -25 ~ +70°C 3.5 & 5.5VDC 0.047F ~ 0.47F (47,000μF ~ 470,000μF) -40°C ~ +85°C +80%/-20% (Z) Δ Capacitance Change Maximum ESR Current at 30 minutes Δ Capacitance Change Maximum ESR Current at 30 minutes Δ Capacitance Change Maximum ESR Current at 30 minutes NEXCW Series RoHS Compliant High Temperature Reﬂow +260°C Super Capacitor Application Guide Within ±30% of initial measured value Less than 200% of the speciﬁed maximum value Less than 200% of the speciﬁed maximum value Within +80%/-20% of speciﬁed value Less than speciﬁed maximum value Less than speciﬁed maximum value Within ±20% of initial measured value Less than 120% of the speciﬁed maximum value Less than 120% of the speciﬁed maximum value Humidity Resistance (240 hours @ 40°C/90% RH) STANDARD VALUES AND SPECIFICATIONS NIC P/N NEXCW104Z3.5V10.7X5.5TRF NEXCW224Z3.5V10.7X5.5TRF NEXCW474Z3.5V10.7X8.5TRF NEXCW473Z5.5V10.7X5.5TRF NEXCW104Z5.5V10.7X5.5TRF NEXCW224Z5.5V10.7X8.5TRF Capacitance Value (F) Discharge 0.10 0.22 0.47 0.047 0.10 0.22 Working Voltage (VDC) 3.5 3.5 3.5 5.5 5.5 5.5 Max. Current @ 30 minutes (mA) 0.090 0.200 0.420 0.071 0.150 0.330 Max. ESR @ 1KHz (Ω) 100 50 50 100 50 50 HIGH TEMPERAT...