FDPF20N50T

FDP20N50 / FDPF20N50 / FDPF20N50T — N-Channel UniFETTM MOSFET November 2013 FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A Low Gate Charge (Typ. 45.6 nC) Low Crss (Typ. 27 pF) 100% Avalanche Tested Description UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology. This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance and higher avalanche energy strengt h. This device family is suit able for switching power convert er applicatio ns such as power factor corr ection (PFC), flat p anel display (FPD) T V pow er, ATX and electronic lamp ballasts. Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply D G D S TO-220 G D S G TO-220F S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage TC = 25°C unless otherwise noted. FDP20N50 500 FDPF20N50 / FDPF20N50T 20 * 12.9 * 80 *A ±30 (Note 2) (Note 1) (Note 1) (Note 3) Parameter Unit V A A V mJ A mJ V/ns - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) 20 12.9 80 1110 20 25 4.5 250 2.0 -55 to +150 300 Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C 38.5 0.3 W ...