2SK3798
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
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2SK3798
Unit: mm
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2SK3798
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSIV)
www.DataSheet4U.com
2SK3798
Unit: mm
Switching
Regulator Applications
Low drain-source ON resistance: RDS (ON) = 2.5Ω (ty p.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Sy Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC ( Drain current Note 1) mbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 4 12 40 W 345 4 4.0 150 -55~150 ° mJ A mJ °C C A
1: Gate 2: Drain 3: Source
Unit V V V
Pulse (t = 1 ms) ( Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA SCTOSHIBA
― 67 2-10U1B
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics Sy Thermal resistance, channel to case Thermal resistance, channel to ambient mbol Rth (ch-c) Rth (ch-a) 62. Max 3.125 5 Unit °C/W °C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 39.6 mH, IAR = 4.0 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This
transistor is an electrostatic sensitive device. Please handle with caution.
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2005-01-26
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2SK3798
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