Document
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I27124 rev. D 02/03
20MT120UF
"FULL-BRIDGE" IGBT MTP
Features
Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Low Diode VF • Square RBSOA • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Operation • UL approved (File E78996)
• UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
VCES = 1200V IC = 40A T C = 25°C
Benefits
Applications • Rugged with UltraFast Performance • Benchmark Efficiency above 20KHz • Outstanding ZVS and Hard Switching Operation • Low EMI, requires Less Snubbing • Excellent Current Sharing in Parallel Operation • Direct Mounting to Heatsink • PCB Solderable Terminals • Very Low Junction-to-Case Thermal Resistance
• Optimized for Welding, UPS and SMPS
MMTP
Absolute Maximum Ratings Parameters
VCES I I I I I
C
Max
1200 @ TC = 25°C @ TC = 106°C 40 20 100 100 @ TC = 106°C 25 100 ± 20 2500 240 96 @ TC = 25°C @ TC = 100°C
Units
V A
Collector-to-Emitter Breakdown Voltage Continuos Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation (only IGBT)
CM LM F FM
VGE VISOL PD
V W
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20MT120UF
I27124 rev. D 02/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
V(BR)CES ∆V(BR)CES/ ∆TJ VCE(ON)
Min Typ Max Units Test Conditions
+1.3 3.29 4.42 3.87 5.32 3.99 -14 17.5 0.7 2.9 250 3.0 9.0 ±250 3.59 4.66 4.11 5.70 4.27 6 V V/°C V VGE = 0V, I C = 250µA VGE = 0V, I C = 3mA (25-125°C) = = = = = = = = = = = = 15V, I C = 20A 15V, I C = 40A 15V, I C = 20A T J = 125°C 15V, I C = 40A T J = 125°C 15V, I C = 20A T J = 150°C VGE, I C = 250µA VGE, I C = 3mA (25-125°C) 50V, IC = 20A, PW = 0V, V CE = 1200V, TJ 0V, V CE = 1200V, TJ 0V, V CE = 1200V, TJ ± 20V 80µs = 25°C = 125°C = 150°C
Collector-to-Emitter Breakdown Voltage 1200 Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage ∆ VGE(th) / Temperature Coeff. of ∆TJ Threshold Voltage g fe I CES Transconductance Zero Gate Voltage Collector Current (1)
4
VGE VGE VGE VGE VGE V VCE mV/°C VCE S µA mA nA VCE VGE VGE VGE VGE
I GES
Gate-to-Emitter Leakage Current
(1) I CES includes also opposite leg overall leakage
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area
Min Typ Max Units Test Conditions
176 19 89 513 402 915 930 610 1540 264 30 134 770 603 1373 1395 915 2310 nC IC = .