20FL2CZ51A

20DL2CZ51A,20FL2CZ51A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 20DL2CZ51A, 20FL2CZ51A SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V z Average Output Rectified Current : IO = 20 A z Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max) z Low Switching Losses and Output Noise ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage 20DL2CZ51A 20FL2CZ51A VRRM 200 300 V Average Output Rectified Current IO 20 A Peak One Cycle Surge Forward Current (Sine Wave) Junction Temperature Storage Temperature Range IFSM Tj Tstg 100 (50Hz) 110 (60Hz) −40~150 −40~150 A °C °C JEDEC JEITA TOSHIBA ― ― 2−16E1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 5.9g temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Peak Forward Voltage...