K3228

2SK3228 Silicon N Channel MOS FET High Speed Power Switching ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features Low on-resistance R DS(on) =6mΩ typ. Low drive current 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source http://www.Datasheet4U.com 2SK3228 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 80 ±20 75 300 75 50 181 100 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK3228 Electrical Characteristics (Ta = 25°C) Item Symbol Min 80 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 55 — — — — — — — — — — — — Typ — — — — 6.0 8.0 90 9700 1250 290 150 30 30 80 300 770 370 1.05 90 Max — ±0.1 10 2.5 7.5 12 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 75A, VGS = 0 I F = 75A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 VGS = ±20V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1mA, VDS = 10V*1 I D = 40A, VGS = 10V*1 I D = 40A, VGS = 4V*1 I D = 40A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VDD = 25V VGS = 25V I D = 75A VGS = 10V, ID...