STP11NM50N

STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 Ω , 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220 Features Order codes STD11NM50N STF11NM50N STP11NM50N ■ ■ ■ VDSS @TJmax RDS(on) max < 0.47 Ω ID 1 3 3 550 V 8.5 A DPAK 1 2 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP 3 1 2 Application Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $ ' 3 !-V Table 1. Device summary Marking 11NM50N 11NM50N 11NM50N Package DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Order codes STD11NM50N STF11NM50N STP11NM50N November 2010 Doc ID 17156 Rev 3 1/16 www.st.com 16 http://www.Datasheet4U.com Contents STD11NM50N, STF11NM50N, STP11NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . ....