Document
STD11NM50N STF11NM50N, STP11NM50N
N-channel 500 V, 0.4 Ω , 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220
Features
Order codes STD11NM50N STF11NM50N STP11NM50N
■ ■ ■
VDSS @TJmax
RDS(on) max < 0.47 Ω
ID
1
3
3
550 V
8.5 A
DPAK
1
2
TO-220
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220FP
3 1 2
Application
Switching applications Figure 1. Internal schematic diagram
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Table 1.
Device summary
Marking 11NM50N 11NM50N 11NM50N Package DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube
Order codes STD11NM50N STF11NM50N STP11NM50N
November 2010
Doc ID 17156 Rev 3
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http://www.Datasheet4U.com
Contents
STD11NM50N, STF11NM50N, STP11NM50N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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Doc ID 17156 Rev 3
STD11NM50N, STF11NM50N, STP11NM50N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(2)
Absolute maximum ratings
Value Parameter TO-220 Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Storage temperature Max. operating junction temperature - 55 to 150 150 70 8.5 6 34 70 15 2500 DPAK 500 ± 25 8.5 (1) 6
(1) (1)
Unit TO-220FP V V A A A W V/ns V °C °C
34
PTOT dv/dt (3) VISO Tstg Tj
25
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 8.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS,VDD = 80% V(BR)DSS
Table 3.
Symbol Rthj-case Rthj-amb Rthj-pcb Tl
Thermal data
Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-pcb max(1) Maximum lead temperature for soldering purpose 300 62.5 50 300 1.79 DPAK TO-220FP 5 62.5 °C/W °C/W °C/W °C Unit
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
Symbol IAR EAS
Thermal data
Parameter Avalanche current, repetetive or not repetetive Single pulse avalanche energy (2)
(1)
Value 3 150
Unit A mJ
1. Pulse width limited by TJMAX. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Doc ID 17156 Rev 3
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Electrical characteristics
STD11NM50N, STF11NM50N, STP11NM50N
2
Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On /off states
Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 500 1 100 100 2 3 0.4 4 0.47 Typ. Max. Unit V µA µA nA V Ω
VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C Gate-body leakage current (VDS = 0) VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA Static drain-source on resistance VGS = 10 V, ID = 4.5 A
Table 6.
Symbol Ciss Coss Crss Coss eq.(1) RG Qg Qgs Qgd
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Output equivalent capacitance Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 547 42 2 210 5.8 19 3.7 10 Max. Unit pF pF pF pF Ω nC nC nC
VDS = 50 V, f = 1 MHz, VGS = 0
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VDS = 0 to 400 V, VGS = 0 f = 1 MHz open drain VDD = 400 V, ID = 8.5 A, VGS = 10 V (see Figure 18)
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1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS.
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Doc ID 17156 Rev 3
STD11NM50N, STF11NM50N, STP11NM50N
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 250 V, ID = 4.25 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Min. Typ. 8 10 33 10 Max Unit ns ns ns ns
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Table 8.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery.