STD11NM50N

STD11NM50N Datasheet N-channel 500 V, 400 mΩ typ., 8.5 A MDmesh II Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. STD11NM50N 500 V 470 mΩ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications ID 8.5 A Switching applications G(1) Description S(3) This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical AM01475v1_noZen structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status link STD11NM50N Product summary Order code STD11NM50N Marking 11NM50N Package DPAK Packing Tape and reel DS11395 - Rev 2 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STD11NM50N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt (2) Peak diode recovery voltage slope ...